 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| IGBT MODULE ( N series ) n Features * Square RBSOA * Low Saturation Voltage * Less Total Power Dissipation * Improved FWD Characteristic * Minimized Internal Stray Inductance * Overcurrent Limiting Function (~3 Times Rated Current) n Outline Drawing n Applications * High Power Switching * A.C. Motor Controls * D.C. Motor Controls * Uninterruptible Power Supply n Maximum Ratings and Characteristics * Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *1 Ratings 600 20 150 300 150 300 600 +150 -40 +125 2500 3.5 3.5 Units V V A W C C V Nm n Equivalent Circuit Note: *1:Recommendable Value; 2.5 3.5 Nm (M5) * Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time ( at Tj=25C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=600V VCE=0V VGE= 20V VGE=20V IC=150mA VGE=15V IC=150A VGE=0V VCE=10V f=1MHz VCC=300V IC=150A VGE= 15V RG=16 IF=150A VGE=0V IF=150A Min. Typ. Max. 1.0 15 7.5 2.8 Units mA A V V pF 1.2 0.6 1.0 0.35 3.0 300 4.5 9900 2200 1000 0.6 0.2 0.6 0.2 s V ns * Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. Max. 0.21 0.47 Units C/W 0.05 Collector current vs. Collector-Emitter voltage T j=25C 350 V GE =20V,15V,12V 300 300 350 Collector current vs. Collector-Emitter voltage T j=125C V GE =20V,15V, 12V [A] C 250 10V 200 150 100 50 8V 0 0 1 2 3 4 5 6 Collector-Emitter voltage : V CE [V] [A] 250 10V 200 150 100 50 0 0 1 2 3 4 5 6 Collector-Emitter voltage : V CE [V] 8V Collector-Emitter vs. Gate-Emitter voltage T j=25C 10 10 CE Collector current : I Collector current : I C Collector-Emitter vs. Gate-Emitter voltage T j=125C [V] CE 8 [V] 8 Collector-Emitter voltage : V 6 Collector-Emitter voltage : V 6 4 IC= 300A 150A 75A 4 IC= 300A 2 2 150A 75A 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [V] 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [V] Switching time vs. Collector current V CC =300V, R G =16 , V GE =15V, T j=25C 1000 1000 Switching time vs. Collector current V CC =300V, R G =16 , V GE =15V, Tj=125C , t r , t off , t f [nsec] , t r , t off , t f [nsec] t on t off t off t on tr tf tr tf 100 on on 100 Switching time : t 10 0 50 100 150 200 250 Collector current : I C [A] Switching time : t 10 0 50 100 150 200 250 Collector current : I C [A] Switching time vs. R G V CC =300V, I C =150A, V GE =15V, T j=25C 500 t on t off Dynamic input characteristics T j=25C 25 V CC =200V , t r , t off , t f [nsec] 1000 [V] CE 400 300V 400V 20 tr tf 100 Collector-Emitter voltage : V 300 15 Switching time : t on 200 10 100 5 10 10 Gate resistance : R G [ ] 50 0 0 100 200 300 400 500 600 700 800 Gate charge : Q G [nC] 0 900 Forward current vs. Forward voltage V GE = O V 350 T j=125C 25C 300 Reverse recovery characteristics t rr , I rr vs. I F [A] : trr [nsec] [A] t rr 125C Reverse recovery current : I 250 200 150 100 50 0 0 1 2 Forward voltage : V F [V] 3 4 Forward current : I F rr 100 I rr 125C t rr 25C I rr 25C Reverse recovery time 10 0 50 100 150 200 250 Forward current : I F [A] Reversed biased safe operating area Transient thermal resistance 1 1400 Diode 1200 IGBT +V GE =15V, -V GE <15V, T j<125C, R G >16 [C/W] th(j-c) [A] C 1000 SCSOA 800 600 400 200 (non-repetitive pulse) Thermal resistance : R 0,1 Collector current : I RBSOA (Repetitive pulse) 0 100 200 300 400 500 600 0,01 0,001 0 0,01 0,1 1 Pulse width : PW [sec] Collector-Emitter voltage : V CE [V] Switching loss vs. Collector current V CC =300V, R G =16 , V GE =15V 14 Capacitance vs. Collector-Emitter voltage T j=25C , E off , Err [mJ/cycle] 12 10 E off 25C 8 6 4 2 0 0 50 100 150 200 Collector Current : I C [A] E on 125C E on 25C , C oes , C res [nF] E off 125C 10 C ies on Switching loss : E Capacitance : C ies 1 C oes C res E rr 125C E rr 25C 250 300 0 5 10 15 20 25 30 35 Collector-Emitter Voltage : V CE [V] Fuji Electric GmbH Lyoner Strae 26 D-60528 Frankfurt/M Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56 Fuji Electric (UK) Ltd. Commonwealth House 2 Chalkhill Road Hammersmith London W6 8DW, UK Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60 Specification is subject to change without notice Ma y97 |
Price & Availability of 2MBI150N-060
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |